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Ingrid Koslow

Development Engineer at OSRAM

Ingrid Koslow is a highly skilled professional with a strong background in epitaxy research and development for LED applications.

She specializes in MOCVD/MOVPE growth, design of experiments, statistical analysis, relaxation and misfit dislocation formation, as well as characterization techniques such as XRD, AFM, and SEM-CL.

With a Ph.D. in Materials from UC Santa Barbara, she has held key roles including Development Engineer at OSRAM, Postdoctoral Researcher at Technische Universit\u00e4t Berlin, and Postdoctoral Researcher at Ferdinand-Braun-Institut, Leibniz-Institut f\u00fcr H\u00f6chstfrequenztechnik.

Her expertise also spans device design and semiconductor fabrication using standard techniques and clean room practices.

Ingrid Koslow
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Location

Germany